型号:

SI2316DS-T1-E3

RoHS:无铅 / 符合
制造商:Vishay Siliconix描述:MOSFET N-CH 30V 2.9A SOT23-3
详细参数
数值
产品分类 分离式半导体产品 >> FET - 单
SI2316DS-T1-E3 PDF
产品目录绘图 SC75(A), SC89-3, SOT-23, SOT-323
标准包装 1
系列 TrenchFET®
FET 型 MOSFET N 通道,金属氧化物
FET 特点 逻辑电平门
漏极至源极电压(Vdss) 30V
电流 - 连续漏极(Id) @ 25° C 2.9A
开态Rds(最大)@ Id, Vgs @ 25° C 50 毫欧 @ 3.4A,10V
Id 时的 Vgs(th)(最大) 800mV @ 250µA
闸电荷(Qg) @ Vgs 7nC @ 10V
输入电容 (Ciss) @ Vds 215pF @ 15V
功率 - 最大 700mW
安装类型 表面贴装
封装/外壳 TO-236-3,SC-59,SOT-23-3
供应商设备封装 SOT-23-3(TO-236)
包装 标准包装
产品目录页面 1661 (CN2011-ZH PDF)
其它名称 SI2316DS-T1-E3DKR
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